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| STT6405 Elektronische Bauelemente -5.0 A, -30 V, RDS(ON) 50 m P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen and lead-free DESCRIPTION The STT6405 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. FEATURES N-Channel Lower Gate Charge Small Footprint & Low Profile Package PACKAGE DIMENSIONS REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 Max 0 0.10 0.70 1.00 0.12 Ref 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 Ref 0.60 Ref 0 10 0.30 0.50 0.95 Ref 1.90 Ref ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150) Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Ratings -30 12 -5.0 -4.2 -20 2 0.016 -55 ~ +150 Ratings 62.5 Unit V V A A W W/ Parameter Thermal Resistance- Junction to Ambient 3 Max. Unit /W RJA 01-June-2005 Rev. A Page 1 of 4 STT6405 Elektronische Bauelemente -5.0 A, -30 V, RDS(ON) 50 m P-Channel Enhancement Mode Mos.FET ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25) Drain-Source Leakage Current (Tj=55) Symbol Min BVDSS VGS(th) IGSS IDSS -30 -1.0 - Typ Max -3.0 100 -1 -5 50 75 Unit V V nA uA Test Conditions VGS = 0, ID= -250 uA VDS = VGS, ID= -250 uA VGS = 20 V VDS = -30 V, VGS = 0 VDS = -24 V, VGS = 0 VGS = -10 V, ID = -5.0 A VGS = -4.5 V, ID = -4.0 A VDS = -5V, ID = -5.0A ID = -5.0 A VDS = -15 V VGS = -10 V VDS = -15 V VGS = -10 V RG = 3 RL = 3 Static Drain-Source On-Resistance2 Forward Transconductance Total Gate Charge 2 RDS(ON) gfs Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg m S - 8.6 14.7 2 3.8 8.3 5 29 14 700 120 75 10 18 840 - Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance nC ns pF VGS = 0 V VDS = -15 V f = 1.0 MHz f=1.0 MHz SOURCE-DRAIN DIODE Parameter Forward On Voltage2 Reverse Recovery Time 2 Symbol Min VSD Trr Qrr - Typ Max 23.5 13.4 -1.0 - Unit V ns nC Test Conditions IS = -1.0 A, VGS= -0 V IS = -5.0A, VGS=0V, dl/dt= 100A/us Reverse Recovery Charge Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width300us, duty cycle2%. 2 3. Surface mounted on 1 in copper pad of FR4 board; 156/W when mounted on Min. copper pad. 01-June-2005 Rev. A Page 2 of 4 STT6405 Elektronische Bauelemente -5.0 A, -30 V, RDS(ON) 50 m P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES 01-June-2005 Rev. A Page 3 of 4 STT6405 Elektronische Bauelemente -5.0 A, -30 V, RDS(ON) 50 m P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES 01-June-2005 Rev. A Page 4 of 4 |
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